PART |
Description |
Maker |
RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag 80m惟, 1.5A/0.6A High-Side Power Switches with Flag 80m楼?, 1.5A/0.6A High-Side Power Switches with Flag 80mヘ, 1.5A/0.6A High-Side Power Switches with Flag User Programmable Micro-Power Voltage Detectors
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Richtek Technology Corporation
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FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR HIGH POWER NPN TRANSISTOR From old datasheet system HIGH VOLTAGE NPN POWER TRANSISTOR 8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
MT5375-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
AD260 AD260BND-5 AD260AND-0 AD260AND-1 AD260AND-2 |
High Speed, Logic Isolator with Power Transformer SPECIALTY INTERFACE CIRCUIT, PQIP22 High Speed/ Logic Isolator with Power Transformer High Speed Logic Isolator with Power Transformer 40 MBd five channel digital isolator isolated power for Fieldbus, Microcontroller/peripheral interface and data transmission
|
Analog Devices, Inc. AD[Analog Devices]
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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